| 摘要 |
PURPOSE: An EUV(Extreme Ultra-Violet) mask is provided to improve a yield and an integration degree by preventing a reduction of a contrast due to a lateral tilt and errors caused by defects of a reflective layer through an improvement of a structure. CONSTITUTION: An EUV mask comprises an absorbing layer(21) as a substrate and a reflective layer pattern(23) on the absorbing layer(21) for exposing a defined portions as a pattern on the absorbing layer(21). At this time, the absorbing layer(21) is composed of Al, TaSi, TiN, Ti, W, Cr, NiSi, or TaSiN layer and the reflective layer pattern(23) is made of Mo/Si, Mo/Be, MoRu/Be, or Ru/Be stacked layer. At this point, the reflective layer pattern(23) is capable of forming with a unique material. An incident light source to the reflective layer pattern(23) is useful to the patterning process due to being reflected.
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