| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, where occurrence of a slip is suppressed and a device can be formed on a high-resistance substrate. SOLUTION: A substrate 11 has the dissolved oxygen concentration which is not higher than 8×10<SP>17</SP>(atoms/cm<SP>3</SP>) and the impurity concentration which is to become an acceptor or a donor is not higher than 1×10<SP>15</SP>(atoms/cm<SP>3</SP>). An oxygen deposition layer 12 for suppressing the slippage from a rear face of the substrate is disposed in the substrate 11. A silicon layer, whose dissolved oxygen concentration is not higher than 8×10<SP>17</SP>(atoms/cm<SP>3</SP>) and whose impurity concentration which is to become the acceptor or donor is not higher than 1×10<SP>15</SP>(atoms/cm<SP>3</SP>) and on which an element is formed, is formed on the substrate 11. COPYRIGHT: (C)2004,JPO |
