MAGNETO-RESISTIVE RAM AND ITS FABRICATION METHOD

摘要

PURPOSE: A magneto-resistive RAM and its fabrication method are provided to obtain a uniform magnetic field according to a distance without an electromagnetic interference between devices. CONSTITUTION: A MOS transistor is formed with the first gate(106) to read information and the second gate(108) to write information, a source(104a,104a') and a drain junction(104b) on a semiconductor substrate(100). A bottom electrode(121) is connected to the source junction of the semiconductor substrate beside the first gate. The first magnetic film(123) is formed on an upper surface of the bottom electrode. An insulation barrier film(125) is formed on the first magnetic film and forms a potential wall with the first magnetic film. The second magnetic film(127) is formed on an upper part of the barrier film with corresponding to the first magnetic film. A top electrode is formed on the second magnetic film. And a bit line(132) is contacted to the source junction of the semiconductor substrate beside the second gate.