| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect semiconductor device which has both a low ON-state resistance and a short-circuit current that is not excessive simultaneously by taking advantage of the width of the channels and is hardly damaged. SOLUTION: The field-effect semiconductor device is equipped with a semiconductor region sandwiched between the gate electrodes 106, and the semiconductor region is formed into a stripe-shaped structure composed of an n<SP>+</SP>emitter region 104 and a p emitter region. The p emitter region is composed of a low-concentration p-channel region 103 and a high-concentration p<SP>+</SP>emitter region 100. The n<SP>+</SP>emitter region 104, the p-channel region 103, and the p<SP>+</SP>emitter region 100 are brought into contact with an emitter electrode 109. By this setup, a channel width X is set at a certain value that is just enough to enable an ON-state current in a normal operation to flow through. Thus, the field-effect semiconductor device having both a low ON-state resistance and a short-circuit current that is not excessive at the same time can be realized. COPYRIGHT: (C)2004,JPO
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