| 摘要 |
PURPOSE: To form a resistance film having high reproducibility and excellent controllability of a resistance value, and provide a sintered body which can form a resistance film having high reproducibility and excellent controllability of a resistance value. CONSTITUTION: The sintered body contains 95 wt.% or more germanium and tungsten, wherein a weight ratio of tungsten to germanium lies within a range from 0.01 to 10, wherein a filling factor of germanium and tungsten is equal to or larger than 60 %, wherein the sintered body is used as a target of a PVD (physical vapor deposition) apparatus, and wherein the sintered body is used as a target of sputtering. The film forming method of a resistance film is characterized in that the resistance film is formed onto a substrate by sputtering the sintered body, wherein the resistance film having predetermined resistivity is formed by changing a weight ratio of tungsten to germanium of the sintered body, wherein the predetermined resistivity ρ is ρ=10¬3 to 10¬9 ¥Øm, and wherein the sputtering is executed in a nitrogen atmosphere. In a manufacturing method of an airtight vessel supporting structure which is arranged in the airtight vessel containing an electron source and an irradiation body to which electrons emitted from the electron source are irradiated, the manufacturing method comprises a film forming step of forming a resistance film onto a surface of a substrate, wherein the film forming step is executed by the film forming method.
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