| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film surface acoustic wave device capable of enhancing a resonator characteristic and a filter characteristic by reducing the parasitic capacitance caused between a substrate and a conductive film arranged to a lower layer of a piezoelectric thin film. SOLUTION: The thin film surface acoustic wave device 100 includes: the substrate 101; the piezoelectric thin film 103 arranged on the substrate 101; and electrodes 104ax, 104ay, and 105a formed to the surface of the piezoelectric thin film 103; and wire layers 104bx, 104by, 104cx, 104cy, and 105b conductively connected to the electrodes 104ax, 104ay, and 105a and is configured such that the distance between the substrate 101 and the wire layers 104bx, 104by, 104cx, 104cy, and 105b is greater than the distance between the substrate 101 and the electrodes 104ax, 104ay, and 105a. COPYRIGHT: (C)2005,JPO&NCIPI
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