Semiconductor device and display device including the semiconductor device

摘要

A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

主权项

1. A display device comprising:
a gate electrode on an insulating surface; a first wiring on the insulating surface; a first insulating film over the gate electrode and the first wiring; a semiconductor layer on the first insulating film, the semiconductor layer comprising a channel formation region over the gate electrode with the first insulating film interposed therebetween; a source electrode over and in electrical contact with the semiconductor layer; a drain electrode over and in electrical contact with the semiconductor layer; a second wiring on the first insulating film; a second insulating film over the source electrode, the drain electrode and the second wiring; and a third wiring over the second insulating film, wherein the third wiring contacts the first wiring through an opening of the first insulating film, wherein the third wiring contacts the second wiring through an opening of the second insulating film, and wherein the second wiring has a smaller taper angle than the source electrode and the drain electrode.