| 摘要 |
1278443 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 18 June 1969 [21 June 1968] 58687/71 Divided out of 1278442 Heading H1K Contact is made to one or more emitters 9 of a transistor or integrated circuit body by means of several fingers 5 extending through holes 8 in passivation, the fingers each being connected to a common electrode portion 4 also lying on the passivation by a respective resistor, at least two of these resistors being formed by the resistance of respective diffused regions 6 located in a common isolating region 7 of the opposite conductivity type. As shown, the junctions 14 defining the resistive regions 6 are shorted by the common portion 4 of the emitter terminal within aperture 16 to prevent transistor action. Figs. 3 and 4 (not shown) illustrate an embodiment of copending Specification 1,278,442, and depict two double emitter transistors forming part of an integrated circuit. The resistors associated with the four fingers are defined by paths in a common diffused region; in accordance with an embodiment of the present invention, the individual resistors may instead be formed by replacing the common region by individual diffused regions within a common body part of the opposite conductivity type. In the various structures unbalance in the various emitter connections which would be occasioned by relative differences in path length from the respective resistor to the point of attachment of the external emitter lead on the common electrode portion may be allowed for in manufacture by making the common electrode portion of continuously varying width or by making the impurity concentration and/or diffusion depth of the resistance regions different or by providing different path lengths in the various resistance regions or by varying the areas of contact to the respective regions. |
