Solid state photomultipliers array of enhanced fill factor and simplified packaging

摘要

A multi-pixel photomultiplier optical sensor may include an array of photomultiplier dies. Each photomultiplier die may include a front side connection pad, SPAD cells, each SPAD cell including a front side electrode, a rear side electrode, and a resistor coupled in series to the front side electrode and coupled in common with other quenching resistors to the front side connection pad. The multi-pixel photomultiplier optical sensor may include a metallization layer in contact with the rear side electrode common to SPADs of the array of photomultiplier dies and electrically conductive pads. The electrically conductive bus may be coupled to an electrically conductive pin for distributing bias current to the array of photomultiplier dies. The multi-pixel photomultiplier optical sensor may include electrically conductive bond wires coupling at least some of the electrically conductive pads to the electrically conductive bus, and distributing bias current to the array of photomultiplier dies via the electrically conductive bus.

主权项

1. A multi-pixel photomultiplier optical sensor comprising:
a multilevel printed circuit board; a plurality of electrically conductive traces carried by said multilevel printed circuit board; a plurality of electrically conductive pads carried by said multilevel printed circuit board; an electrically conductive bus carried by said multilevel printed circuit board; a plurality of electrically conductive pins carried by said multilevel printed circuit board and comprising a first group along a perimeter of said multilevel printed circuit board, and a second group on a surface of the multilevel printed circuit board; each electrically conductive pin from said first group being coupled via said plurality of electrically conductive traces to said electrically conductive bus; each electrically conductive pin from said second group being coupled via said plurality of electrically conductive traces to a respective electrically conductive pad; an array of monolithic silicon photomultiplier (SiPM) dies, each monolithic SiPM die having a front side and a rear side; each monolithic SiPM die comprising
a front side connection pad,a plurality of single photon avalanche diode (SPAD) cells optically isolated from one another, each SPAD cell including
a front side electrode,a rear side electrode, anda resistor coupled in series to said front side electrode and coupled in common with all other resistors to said front side connection pad, anda metallization layer in contact with said rear side electrode and the respective electrically conductive pad from said plurality thereof; said array of monolithic SiPM dies being positioned side-by-side; said electrically conductive bus being coupled to at least one electrically conductive pin for uniformly distributing bias current to all of said array of monolithic SiPM dies; and a plurality of electrically conductive bond wires coupling at least some of the plurality of electrically conductive pads to said electrically conductive bus, and distributing bias current to said array of monolithic SiPM dies via said electrically conductive bus.