| 摘要 |
<p>PURPOSE:To use a multiplicity of cold emission surfaces with negative electron affinity for the camera tube effectively by providing them on a piece of N-type semiconductor substrate controllably and closely. CONSTITUTION:Ohmic contact metal thin film 2 is provided on the back of N-type silicon semiconductor substrate 1, SiO2 insulated film 3 to make electrons, which proceed from said semiconductor to the NEA faces (electron emission face), produce a concentrating effect is formed on the surface, and a multiplicity of holes the diameter of which are 50mu or less is provided in the insulated film by photo-etching. Also P-type silicon semiconductor layer 5 of from 1 to 5mu thickness is generated on the insulated film 3, respective parts of the semiconductor layer 5 on the holes are separated from each other by photo-etching. The NEA face 6, in which cesium and oxygen are adsorbed to activate itself, with negative electron affinity is formed in the surface the part of which is opposite to the hole.</p> |
