| 摘要 |
PURPOSE:To form an oxide film by an anode oxidation even on the surface of a metallic film wire not connected to a semiconductor substrate by utilizing double metallic films. CONSTITUTION:The first aluminum film 13 is formed on an insulating film 12 covering the surface of a silicon substrate 11, and a photoresist film 14 is selectively formed thereon. Then, the second aluminum films 15, 15', 15'' are covered on the surface by evaporation. Thereafter, an anode oxidation is conducted, and oxide films 16' 16'' are formed only on the surfaces of the second film regions 15', 15'' directly evaporated on the film 13. Subsequently, the film 14 is molten and removed, and the film 15 on the film 14 is also removed concurrently. Then, the film 13 not covered with the films 15', 15'' is removed with the oxide films 16', 16'' as masks. Thus, aluminum wires 15' 15'' covered with the oxide films 16', 16'' are completed. |
