发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.
申请公布号 US2016372434(A1) 申请公布日期 2016.12.22
申请号 US201615257573 申请日期 2016.09.06
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. 发明人 SHAO TUNG-LIANG;LAI YU-CHIA;TU HSIEN-MING;HUANG CHANG-PIN;YANG CHING-JUNG
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device, comprising: a substrate including a first layer and a second layer over the first layer; a bump disposed over the second layer; and a molding disposed over the second layer and surrounding the bump, wherein the second layer includes a protruded portion protruding from a sidewall of the molding adjacent to a periphery of the substrate, and the molding is in contact with at least a portion of the bump.
地址 Hsinchu TW