发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To form a low threshold value when an input changes from a low to a high level and to form a high threshold value when it changes from a high to a low level, by using the 1st and the 2nd parallel circuits comprising MOSFETs, inverter circuit comprising C-MOSes, and a Schmitt circuit. CONSTITUTION:A P-MISFETP14 and an N-MISFETN16 form the 1st inverter circuit. A P-MISFETP14 and a P15 form the 1st parallel circuit and N-MISFETs N14, N15 form the 2nd parallel circuit. The output of the Schmitt trigger circuit 10 is opposite in phase with the input and the input/output characteristics forms a hysteresis loop. Further, gates of the FETsP14, P16, N14, N16 and the input of the Schmitt trigger circuit 10 are connected respectively to the input terminal, the output of the 1st inverter circuit is connected to an output terminal and the gate of the FETsP15, N15 is connected to the output of the Schmitt trigger circuit 10.
申请公布号 JPS5947830(A) 申请公布日期 1984.03.17
申请号 JP19820157458 申请日期 1982.09.10
申请人 NIPPON DENKI KK 发明人 OBATA HIROYUKI
分类号 H03K3/353;H03K3/3565 主分类号 H03K3/353
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