| 摘要 |
PURPOSE:To enable continuous or repeated operation over a long time at a high film growing speed without lowering the capacity of a formed film, in a capacity connection type plasma CVD apparatus, by constituting an electrode in a metal net form. CONSTITUTION:A drum 11 being a substrate is arranged as an electrode in a reaction chamber 10 and an electrode 12 is provided so as to surround said drum 11 in opposed relationship while reaction gas such as SiH4 is introduced into said reaction chamber 10 from introducing pipes 13 and glow discharge is brought about to deposit and form an a-Si film on the drum 11. In this case, the electrode 12 is constituted of a net made of a metal hardly generating gas adsorption during evacuation such as stainless steel. By this constitution, a flow amount is increased, PF power is made large, the generation and deposition of a fine powder in a reaction region can be prevented even under high gas pressure, the generation of a powder or a flake peeling off and detaching from the electrode and scattering can be reduced and the purpose of the invention can be achieved. |
