发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To reduce the number of data lines or the number of common data lines and common output lines and to suppress the increment of parasitic capacity by constituting a sense amplifier group by multi-stages. CONSTITUTION:The common output of each group of the divided 1st sense amplifier is connected to the 2nd sense amplifier to be exclusively used for each group so that common data lines 50, 51 are connected to a sense amplifier 53. Two kinds are selected by address signals A2, A2' in the 1st sense amplifier and four kinds are selected by the combination of address signals A0, A0', A1, A1' in the 2nd sense amplifier, so that eight kinds of selection and combination can be attained and the functions of a sense amplifier can be completely performed by the circuit. The number of sense amplifiers (2 and 4 amplifiers) is low, the parasitic capacity is low and high speed reading can be attained.
申请公布号 JPS6070590(A) 申请公布日期 1985.04.22
申请号 JP19830179608 申请日期 1983.09.28
申请人 NIPPON DENKI KK 发明人 OZAWA KOUJI
分类号 G11C11/419;G11C11/34;G11C11/41 主分类号 G11C11/419
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