| 摘要 |
PURPOSE:To obtain a self-pulsating LD characterized by excellent stability and reproducibility, by forming a saturable absorbing region comprising a multiplex quantum well structure of a semiconductor as a unitary body together with the LD. CONSTITUTION:On an N-type GaAs substrate 103, an N-type GaAs buffer layer 104, an N-type Al0.4Ga0.6As clad layer 105, a non-doped Al0.05Ga0.95As active layer 106, a P-type Al0.4Ga0.6As clad layer 107 and a P-type GaAs cap layer 108 are formed by an MO-CVD method. A stripe shaped SiO2 mask is attached on the cap layer 108, and a part other than the stripe part is removed to the substrate 103 by chemical etching. A P-type Al0.4Ga0.6As layer 109 and an N- type Al0.4Ga0.6As layer 110 are grown in embedded manner by the MO-CVD method. After the substrate 103 is lapped to a suitable thickness, electrodes 111 and 111' are evaporated. Then cleavage is formed. On the cleaved plane, which is vertical to the direction of a resonator, a non-doped GaAs layers 112 and non-doped Al0.4Ga0.6As layer 113 are grown. Either of the layers 112 and the layers 113 have 50 layers. A saturable absorbing region 102 is manufactured. |
