| 摘要 |
PURPOSE:To reduce the time required for removing a resist and to prevent the remaining of a noble metal, etc., contained in the resist and the deterioration of element characteristics by irradiating UV rays to the resist in an O2 atmosphere then immersing the resist film in hot sulfuric acid. CONSTITUTION:A photoetching stage in using the resist as a mask material and making etching by freon plasma consists of a stage for irradiating UV rays to the resist film in the O2 atmosphere and a stage for immersing the resist film into hot sulfuric acid after said stage. The resist can be quickly and thoroughly removed by the synergistic action of the effect of oxidizing the resist by irradiating the UV to the resist to generate O3 in the O2 atmosphere, the effect of the sulfuric acid to dissolve the resist and the oxidation effect of the metal. Since plasma is not used to remove the resist, the deterioration of the element is hardly generated and the device having the good element characteristics is formed. |
