发明名称 FIELD-EFFECT TRANSISTOR
摘要 PURPOSE:To make a channel temperature uniform by arranging stripe electrodes in a gate region that electrode intervals in the central part of a semiconductor chip are different from those in the vicinity of its both end parts. CONSTITUTION:The intervals of gate stripe fingers 6 are arranged so that an interval B in the central part of a chip is relatively larger than an interval B in its both end parts. Accordingly, overlapping of heat generation in a channel part can be alleviated in the central part of the chip and the heat resistance of the effective chip of the central part can be reduced. When a field-effect transistor performs high-frequency and high-output operation, uniforming and reduction of a channel temperature of the chip can be contrived and enhancement of an output and reliability are improved.
申请公布号 JPS62293781(A) 申请公布日期 1987.12.21
申请号 JP19860138818 申请日期 1986.06.13
申请人 NEC CORP 发明人 SHIOZAKI OSAMU
分类号 H01L21/338;H01L29/80;H01L29/812 主分类号 H01L21/338
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