| 摘要 |
PURPOSE:To suppress the accelerating diffusion of an impurity due to implantation damage by implanting impurity ions of high energy into a semiconductor substrate, and then annealing it at high temperature before heat-treating it at low temperature in a later step. CONSTITUTION:After impurity ions are implanted with high energy of 600 keV-10MeV into a semconductor substrate, it is annealed at high temperature of 1000 deg.C or higher before heat treating at a later step. That is, the recovery of damage due to ion implanting is fast by heat treating at high temperature of 1000 deg.C, the redistribution of the impurity becomes small, and no disorder of a crystal occurs. Thus, the accelerating diffusion due to ion implanting damage at the time of implanting the impurity with high energy and the occurrence of a defect can be suppressed to the minimum, the miniaturization of a transistor and the distance between wells can be performed, and an LSI can be highly integrated and the reliability can be easily enhanced.
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