发明名称 |
HIGH AND LOW SIDE BOOTSTRAP DRIVING CONTROL METHOD AND DEVICE |
摘要 |
A high and low side bootstrap driving control method, comprising: detecting a circuit property of a circuit in which a high side transistor and a low side transistor are located (701); and when the circuit property meets a preset condition, controlling the high side transistor and the low side transistor to output particular driving waveforms according to a preset policy (702). The preset policy comprises: configuring the high side transistor to work in a closed-loop state, and configuring the low side transistor to work in an open-loop state; within a switching cycle, turning on the low side transistor at a time later than the starting time of the switching cycle by a first predetermined period of time and turning off the low side transistor before the turn-on time of the high side transistor, or turning on the low side transistor after the turn-off time of the high side transistor and turning off the low side transistor at a time earlier than the ending time of the switching cycle by a second predetermined period of time, wherein the switching cycles of the high side transistor and the low side transistor are identical and synchronous. The method can address the problem in which the high side transistor and the low side transistor are unable to utilize bootstrap driving in some application scenarios, thus avoiding an increase in costs and circuit complexity. |
申请公布号 |
WO2016177118(A1) |
申请公布日期 |
2016.11.10 |
申请号 |
WO2016CN76502 |
申请日期 |
2016.03.16 |
申请人 |
ZTE CORPORATION |
发明人 |
HONG, Xiaoqin;LU, Zhifeng;MENG, Yanni;JIANG, Hongbo;SUN, Hao |
分类号 |
H02M1/088;H02M3/155;H02M7/217 |
主分类号 |
H02M1/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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