发明名称 ATOMIC LAYER GROWTH DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent adhesion of particles to a mask or a susceptor in an atomic layer growth device using a mask or a susceptor.SOLUTION: An atomic layer growth device for forming a thin film on a substrate comprises a film formation container, a stage installed in the film formation container, a susceptor for holding the substrate on the stage, a mask arranged on the substrate and surrounding the substrate; a mask pin movable up and down while supporting the mask, and a mask pin hole penetrating the stage and the susceptor vertically and through which the mask pin is inserted in a vertically movable manner. The susceptor includes a susceptor main body having a substrate holding surface, and a susceptor peripheral portion positioned around the susceptor main body and having a height lower than that of the holding surface. The mask pin hole opens to the susceptor peripheral portion. An inert gas supply port for discharging gas to the upper side is provided in the susceptor peripheral portion in the surrounding area of the mask around the holding surface. An inert gas supply path for supplying an inert gas is connected to the inert gas supply port.SELECTED DRAWING: Figure 3
申请公布号 JP2016225325(A) 申请公布日期 2016.12.28
申请号 JP20150106856 申请日期 2015.05.26
申请人 JAPAN STEEL WORKS LTD:THE 发明人 MATSUMOTO TATSUYA;WASHIO YOSHIAKI
分类号 H01L21/31;C23C16/04;C23C16/44;C23C16/455 主分类号 H01L21/31
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