METAL-FREE CVD COATING OF GRAPHENE ON GLASS AND OTHER DIELECTRIC SUBSTRATES

摘要

A catalyst-free CVD method for forming graphene. The method involves placing a substrate within a reaction chamber, heating the substrate to a temperature between 600° C. and 1100° C., and introducing a carbon precursor into the chamber to form a graphene layer on a surface of the substrate. The method does not use plasma or a metal catalyst to form the graphene.