MEMORY CIRCUIT FOR LOW POWER SUPPLY VOLTAGE

摘要

The present invention relates to a memory circuit comprising:
- at least one bit cell (12) for storing data and having a first terminal (15) and a second terminal (17), wherein one of said terminals (15, 17) is coupled to a bit-line (16),
- at least one current switch (20) connected to the bit-line (16) and connected to a current source (22) and being operable to selectively provide a current to the bit cell (12),
- a sense amplifier (30) having at least one input (31) connected to a sensing node (33) on the bit-line (16), wherein the sensing node (33) is located between the bit cell (12) and the at least one current switch (20).