发明名称 |
PROCESS FOR FILLING DEEP TRENCHES IN A SEMICONDUCTOR MATERIAL BODY |
摘要 |
A process for manufacturing a semiconductor device envisages the steps of: providing a semiconductor material body having at least one deep trench that extends through said body of semiconductor material starting from a top surface thereof; and filling the deep trench via an epitaxial growth of semiconductor material, thereby forming a columnar structure within the body of semiconductor material. The manufacturing process further envisages the step of modulating the epitaxial growth by means of a concurrent chemical etching of the semiconductor material that is undergoing epitaxial growth so as to obtain a compact filling free from voids of the deep trench; in particular, a flow of etching gas is introduced into the same reaction environment as that of the epitaxial growth, wherein a flow of source gas is supplied for the same epitaxial growth. |
申请公布号 |
EP2599107(B1) |
申请公布日期 |
2016.12.21 |
申请号 |
EP20110810872 |
申请日期 |
2011.07.26 |
申请人 |
STMicroelectronics S.r.l. |
发明人 |
SAGGIO, Mario, Giuseppe;MURABITO, Domenico;FIORE, Letterio;MORALE, Giuseppe;ARENA, Giuseppe |
分类号 |
H01L21/20;H01L29/06;H01L29/66;H01L29/739;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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