| 摘要 |
A method for forming a barrier metal layer and a method for a metal line in a semiconductor device using the same are provided to improve contact resistance with a lower layer by performing a cleaning process on the inside of a contact hole before forming a barrier metal layer to remove a natural oxide layer or polymer. A dielectric(102) containing silicon is formed on a substrate(100). The substrate has a lower layer(101) containing silicon. The dielectric is etched to form a contact hole that exposes the lower layer. Ta source gas and the silicon are respectively reacted by supplying the Ta source gas into a CVD chamber to form a TaSi layer along an inner surface of the contact hole. Nitrogen and a part of the TaSi2 layer are reacted by supplying nitrogen gas into the CVD chamber additionally to phase-convert the TaSi2 layer into a TaSi layer and to form a TaSiN layer(105), simultaneously. Before the TaSi2 layer is formed, a cleaning process is performed on the contact hole.
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