SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHODS FOR MANUFACTURING THEM

摘要

A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.

主权项

1. A silicon carbide substrate in which a region including at least one main surface is made of single-crystal silicon carbide, the one main surface not being covered by any other semiconductor layer,
sulfur atoms being present in said one main surface at not less than 60×1010 atoms/cm2 and not more than 900×1010 atoms/cm2, oxygen atoms being present in said one main surface at not less than 3 at % and not more than 30 at % and a diameter of said silicon carbide substrate being not less than 125 mm.