MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A method of manufacturing an MRAM device includes sequentially forming a first insulating interlayer and an etch-stop layer on a substrate. A lower electrode is formed through the etch-stop layer and the first insulating interlayer. An MTJ structure layer and an upper electrode are sequentially formed on the lower electrode and the etch-stop layer. The MTJ structure layer is patterned by a physical etching process using the upper electrode as an etching mask to form an MTJ structure at least partially contacting the lower electrode. The first insulating interlayer is protected by the etch-stop layer so not to be etched by the physical etching process.

主权项

1. A method of manufacturing a magnetoresistive random access memory (MRAM) device, comprising:
sequentially forming a first insulating interlayer and an etch-stop layer on a substrate; forming a lower electrode through the etch-stop layer and the first insulating interlayer; sequentially forming a magnetic tunnel junction (MTJ) structure layer and an upper electrode on the lower electrode and the etch-stop layer; and patterning the MTJ structure layer by a physical etching process using the upper electrode as an etching mask to form an MTJ structure that at least partially contacts the lower electrode, wherein the first insulating interlayer is protected by the etch-stop layer so not to be etched by the physical etching process.