发明名称 DIELECTRIC STACK, AN ISOLATOR DEVICE AND METHOD OF FORMING AN ISOLATOR DEVICE
摘要 An isolator device is provided comprising a body of first dielectric material between the first and second conductors, such as primary and secondary coils of a micro-transformer. A region of second dielectric material is provided between the body of first dielectric material and at least one of the first and second electrodes, wherein the second dielectric material has a higher relative permittivity than the first dielectric material. This provides enhances ability to withstand the Electric fields generated at the edge of a conductor. The body of the first dielectric can be tapered to provide stress relief to prevent the second dielectric material developing stress cracks.
申请公布号 US2017117084(A1) 申请公布日期 2017.04.27
申请号 US201615179741 申请日期 2016.06.10
申请人 Analog Devices Global 发明人 Murphy Patrick J.;O'Brien Stephen;Carroll Sarah;Stenson Bernard P.;Mcloughlin Conor John;Osiak Michal J.
分类号 H01F27/28;H01B3/12;H01B19/04;H01B3/30;H01F41/04;H01B17/62 主分类号 H01F27/28
代理机构 代理人
主权项 1. A dielectric structure, comprising: a first layer of a first type of dielectric formed adjacent a substrate, and a second layer of the first dielectric formed on the first layer, wherein the second layer is delimited by a periphery and at least some parts of the second layer do not extend to or beyond a periphery of the first layer, and further including a layer of a second dielectric formed over an uppermost one of the layers of the first dielectric, wherein the layer of the second dielectric has a higher permittivity than the first dielectric.
地址 Hamilton BM