发明名称 |
DIELECTRIC STACK, AN ISOLATOR DEVICE AND METHOD OF FORMING AN ISOLATOR DEVICE |
摘要 |
An isolator device is provided comprising a body of first dielectric material between the first and second conductors, such as primary and secondary coils of a micro-transformer. A region of second dielectric material is provided between the body of first dielectric material and at least one of the first and second electrodes, wherein the second dielectric material has a higher relative permittivity than the first dielectric material. This provides enhances ability to withstand the Electric fields generated at the edge of a conductor. The body of the first dielectric can be tapered to provide stress relief to prevent the second dielectric material developing stress cracks. |
申请公布号 |
US2017117084(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201615179741 |
申请日期 |
2016.06.10 |
申请人 |
Analog Devices Global |
发明人 |
Murphy Patrick J.;O'Brien Stephen;Carroll Sarah;Stenson Bernard P.;Mcloughlin Conor John;Osiak Michal J. |
分类号 |
H01F27/28;H01B3/12;H01B19/04;H01B3/30;H01F41/04;H01B17/62 |
主分类号 |
H01F27/28 |
代理机构 |
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代理人 |
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主权项 |
1. A dielectric structure, comprising: a first layer of a first type of dielectric formed adjacent a substrate, and a second layer of the first dielectric formed on the first layer, wherein the second layer is delimited by a periphery and at least some parts of the second layer do not extend to or beyond a periphery of the first layer, and further including a layer of a second dielectric formed over an uppermost one of the layers of the first dielectric, wherein the layer of the second dielectric has a higher permittivity than the first dielectric. |
地址 |
Hamilton BM |