| 发明名称 |
POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME |
| 摘要 |
A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid. |
| 申请公布号 |
US2017123318(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615359973 |
申请日期 |
2016.11.23 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
KANDA Hiromi;KANNA Shinichi;INABE Haruki |
| 分类号 |
G03F7/039;G03F7/16;G03F7/09;G03F7/38;G03F7/32;G03F7/40;G03F7/004;G03F7/20 |
主分类号 |
G03F7/039 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resist composition for ArF exposure comprising:
(A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z):
(x) an alkali-soluble group;(y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and(z) a group which decomposes by an action of an acid, and (F) a solvent, wherein the fluorine-containing compound (C) has a structure represented by formula (F3): wherein R62 and R63 each independently represents a fluoroalkyl group, R64 represents a hydrogen atom. |
| 地址 |
Tokyo JP |
