发明名称 METHOD FOR PRODUCING SEMICONDUCTOR PACKAGE
摘要 Provided is a method for producing a semiconductor package. By this method, a periphery of a light-exposure planning region can be prevented from being exposed to light. The method is a semiconductor package producing method in which a film-formation planning surface of a cured product has a surface roughness of a predetermined value or less.
申请公布号 US2017125373(A1) 申请公布日期 2017.05.04
申请号 US201415107222 申请日期 2014.12.22
申请人 NITTO DENKO CORPORATION 发明人 Morita Kosuke;Ishizaka Tsuyoshi;Ishii Jun;Shiga Goji;Iino Chie
分类号 H01L23/00;H01L21/78;H01L21/56 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor package producing method comprising: a step of forming a sealed body by pressurizing a chip-temporarily-fixed body comprising a supporting plate, a temporarily-fixing material stacked over the supporting plate and a semiconductor chip fixed temporarily over the temporarily-fixing material, and a thermosetting resin sheet arranged over the chip temporarily-fixed body, the sealed body comprising the semiconductor chip and the thermosetting resin sheet covering the semiconductor chip; a step of forming a cured body by heating the sealed body to cure the thermosetting resin sheet, the cured body comprising the semiconductor chip and the resultant cured resin covering the semiconductor chip; a step of peeling off the temporarily-fixing material from the cured body; and a step of forming a re-interconnection body by forming a re-interconnection layer over a surface of the cured body that had contacted the temporarily-fixing material; wherein the step of forming the re-interconnection body comprises: a step of forming a photosensitive buffer coat film over the surface of the cured body that had contacted the temporarily-fixing material, and a step of making an opening in the buffer coat film by subjecting a workpiece to exposure to light and development; and in the surface of the cured body that contacts the temporarily-fixing material, the cured resin has a surface roughness of 3000 nm or less.
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