发明名称 Bridging DMB Structure for Wire Bonding in a Power Semiconductor Module
摘要 A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an electrical path extends from a module terminal, through a first bonding wire and to a first location on a strip-shaped island, through the island to a second location, and from the second location and through a second bonding wire. The strip-shaped island of the bridging DMB serves as a section of the overall electrical path. Another bonding wire of a separate electrical path passes transversely over the strip-shaped island without any wire crossing any other wire. Use of the bridging DMB promotes bonding wire mechanical strength as well as heat sinking from bonding wires down to the substrate DMB.
申请公布号 US2017125322(A1) 申请公布日期 2017.05.04
申请号 US201615224588 申请日期 2016.07.31
申请人 IXYS Corporation 发明人 Spann Thomas;Balaj-Loos Ira
分类号 H01L23/373;H01L25/07;H01L23/00 主分类号 H01L23/373
代理机构 代理人
主权项
地址 Milpitas CA US