Doped gallium nitride high-electron mobility transistor

摘要

Embodiments include high electron mobility transistors (HEMTs) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse. Other embodiments may include methods for fabricating such a HEMT.

主权项

1. An apparatus comprising:
a first aluminum gallium nitride (AlGaN) barrier layer that comprises a first AlGaN sublayer and a first AlGaN spacer sublayer, and a first doped component between the first AlGaN sublayer and the AlGaN spacer sublayer a gallium nitride (GaN) channel layer coupled with the first barrier layer to form a first heterojunction; a second AlGaN barrier layer coupled with the channel layer to form a second heterojunction, wherein the second AlGaN barrier layer comprises a second AlGaN sublayer and a second AlGaN spacer sublayer; and a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer.