Semiconductor device and method of manufacturing the same

摘要

According to one embodiment, a semiconductor device includes a substrate and a gate electrode. The gate electrode includes a first electrode formed on the substrate, the first electrode having a first conductive property, with a first insulating film between the first electrode and the substrate, and a second electrode formed on the substrate, the second electrode having a second conductive property different from the first conductive property, with a second insulating film between the second electrode and the substrate. The first electrode is formed in a rectangular shape having a hollow portion. A slit is formed in a side surface of the first electrode extending in a width direction of the gate electrode. The second electrode is formed in the slit and along the side surface of the first electrode that has the slit.

主权项

1. A semiconductor device, comprising:
a substrate; and a gate electrode, the gate electrode including a first electrode formed on the substrate, the first electrode comprising a first material having a first conductive property, with a first insulating film between the first electrode and the substrate, and a second electrode formed on the substrate, the second electrode comprising a second material having a second conductive property different from the first conductive property, with a second insulating film between the second electrode and the substrate, wherein the first electrode is formed in a rectangular shape having a hollow portion, a slit is formed in a side surface of the first electrode and extending along a width direction of the gate electrode, and the second electrode is formed in the slit and along the side surface of the first electrode that has the slit.