MgO-BASED CERAMIC FILM, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR FORMING MgO-BASED CERAMIC FILM

摘要

A MgO-based ceramic film according to the present invention contains crystalline phases of MgO and MgAl2O4, and Al is dissolved in the MgO to form a solid-solution. The ceramic film exhibits a diffraction peak representing the (200) plane of MgO at an angle 2θ of more than 42.92° in CuKα XRD measurement. A shoulder preferably appears on the higher angle side of the peak representing the (200) plane of MgO. The mass ratio MgO/Al2O3 of MgO to Al2O3 converted from Mg and Al in terms of oxides is preferably higher than 2.33.

主权项

1. A MgO-based ceramic film containing crystalline phases of MgO and MgAl2O4, wherein Al, but not AlN, is dissolved in MgO to form a solid-solution, and the ceramic film exhibits a diffraction peak representing the (200) plane of MgO at an angle 2θ of more than 42.92° in CuKα XRD measurement.