| 摘要 |
A semiconductor memory device includes a first memory block having a first memory cell transistor and a first select transistor, a second memory block having a second memory cell transistor and a second select transistor, a first select gate line that is electrically connected to a gate of the first select transistor, and a second select gate line that is electrically connected to a gate of the second select transistor. During writing of data to a memory cell transistor in the first block, a first voltage is applied to the first select gate line during a first time period, a second voltage is applied to the second select gate line during a second time period after the first time period, and a third voltage lower than the first voltage is applied to the first select gate line during a third time period after the second time period. |
