SEMICONDUCTOR DEVICE WITH THROUGH-MOLD VIA

摘要

In accordance with the present invention, there is provided multiple embodiments of a semiconductor device. In each embodiment, the semiconductor device comprises a substrate having a conductive pattern formed thereon. In addition to the substrate, each embodiment of the semiconductor device includes at least one semiconductor die which is electrically connected to the substrate, both the semiconductor die and the substrate being at least partially covered by a package body of the semiconductor device. In certain embodiments of the semiconductor device, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In other embodiments, through mold vias are also included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. Other embodiments of the semiconductor device comprise one or more interposers which are electrically connected to the through-mold vias, and may be covered by the package body and/or disposed in spaced relation thereto. In yet other embodiments of the semiconductor device, the interposer may not be electrically connected to the through mold vias, but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.

主权项

1. A packaged semiconductor device structure comprising:
a first redistribution structure comprising:
a first insulative structure including at least one insulating layer, the first insulative structure having a first major surface and an opposing second major surface;a first conductive pattern disposed proximate to the first major surface of the first insulative structure and exposed to the outside of the first insulative structure, wherein the first conductive pattern comprises a first portion disposed proximate to a perimeter part of the first redistribution structure and a second portion disposed proximate to a central part of the first redistribution structure; anda second conductive pattern disposed proximate to the second major surface of the first insulative structure and electrically coupled to the first conductive pattern, wherein at least a portion of the second conductive pattern is exposed to the outside of the first insulative structure; a first semiconductor device electrically coupled to the second portion of the first conductive pattern with conductive bumps; first conductive structures projecting outward from and electrically coupled to the first portion of the first conductive pattern; a package body encapsulating the first semiconductor device, at least portions of the first redistribution structure, and parts of the first conductive structures, wherein portions of the first conductive structures distal to the first redistribution structure are exposed to the outside of the package body, and wherein the portions of the first conductive structures distal to the first redistribution structure reside on a plane that is elevated above at least a portion of the package body; and a second redistribution structure electrically coupled to the portions of the first conductive structures distal to the first redistribution structure.