Selective reflectivity process chamber with customized wavelength response and method

摘要

A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

主权项

1. A system for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy, said system comprising:
a heating arrangement for heating the treatment object using a heating arrangement radiated energy having a heat source emission spectrum at a heat source operating temperature which heat source emission spectrum is different from said given emission spectrum of the treatment object; and a chamber arrangement exposing said treatment object to a portion of the heating arrangement radiated energy while supporting said treatment object within a treatment chamber such that a first fraction of the heating arrangement radiated energy and a second fraction of the treatment object radiated energy are incident on an outer wall arrangement which forms part of the chamber arrangement, and at least a portion of the outer wall arrangement is configured for responding in a first way to a majority of the first fraction of the heating arrangement radiated energy that is incident thereon while that portion of the wall arrangement simultaneously responds in a second way to a majority of the second fraction of the treatment object radiated energy that is incident thereon, based on a difference between the heat source emission spectrum and the given emission spectrum of the treatment object.