HIGH-VOLTAGE LIGHT EMITTING DIODE CHIP AND FABRICATION METHOD

摘要

A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width≦0.4 μm, such as ≦0.3 μm), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.

主权项

1. A high-voltage LED chip, comprising:
a substrate; and a light-emitting epitaxial laminated layer over the substrate; wherein:
the light-emitting epitaxial laminated layer comprises a plurality of light emitting units each including, from bottom to up, an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer; andthe plurality of light emitting units are separated from each other through the grooves over the substrate; a solid material layer cured from a liquid material across an opening of a groove facilitated by surface tension of the liquid material.