| 发明名称 |
SOI STRUCTURE AND FABRICATION METHOD |
| 摘要 |
Present embodiments provide for A SOI substrate and fabricating method thereof are provided. The fabricating method of SOI substrate comprises: providing a first substrate, wherein a first dielectric layer is formed on the first substrate; implanting deuterium ions into the first substrate, wherein a deuterium-impurity layer is formed in the first substrate at predetermined depth; providing a second substrate, wherein a second dielectric layer is formed on the second substrate and bounded with the first dielectric layer; performing an annealing process, wherein microbubbles are formed in the deuterium-impurity layer; and cutting the first substrate from the deuterium-impurity layer to obtain the SOI substrate. |
| 申请公布号 |
US2017110362(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615166015 |
申请日期 |
2016.05.26 |
| 申请人 |
ZING SEMICONDUCTOR CORPORATION |
发明人 |
XIAO DEYUAN;CHANG RICHARD R. |
| 分类号 |
H01L21/762;H01L29/06;H01L29/32;H01L21/30 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fabrication method of a silicon-on-insulator (SOI) substrate, comprising the steps of:
providing a first substrate, wherein a first dielectric layer is formed on the first substrate; implanting deuterium ions into the first substrate, wherein a deuterium-impurity layer is formed in the first substrate at a predetermined depth; providing a second substrate, wherein a second dielectric layer is formed on the second substrate and bounded with the first dielectric layer; performing an annealing process, wherein microbubbles are formed in the deuterium-impurity layer, the annealing process is performed between 600 and 800 degrees Celsius (° C.); and cutting the first substrate from the deuterium-impurity layer to obtain the SOI substrate. |
| 地址 |
Shanghai CN |
