发明名称 Semiconductor memory device including output buffer
摘要 An apparatus includes a first terminal configured to communicate data with an outside of the apparatus, a second terminal configured to receive a first power source potential, a third terminal configured to receive a second power source potential lower than the first power source potential, a fourth terminal configured to be coupled to a calibration resistor, an output buffer including first to third nodes coupled to the first to third terminals respectively, and a replica circuit including fourth and fifth nodes coupled to the second and third terminals respectively, and sixth node coupled to the fourth terminal.
申请公布号 US9627013(B2) 申请公布日期 2017.04.18
申请号 US201514622520 申请日期 2015.02.13
申请人 Micron Technology, Inc. 发明人 Takeda Hiromasa;Fujisawa Hiroki
分类号 G11C7/10;G11C7/04;G11C29/02 主分类号 G11C7/10
代理机构 Dorsey & Whitney LLP 代理人 Dorsey & Whitney LLP
主权项 1. An apparatus comprising: a first terminal configured to communicate data with an outside of the apparatus; a second terminal configured to receive a first power source potential; a third terminal configured to receive a second power source potential different from the first power source potential, wherein the first to third terminals are arranged on a line such that the first terminal is positioned between the second and third terminals; a fourth terminal configured to be coupled to a calibration resistor, wherein the fourth terminal is arranged adjacently to the second terminal such that the second terminal is on the line between the first and fourth terminals; an output buffer including first to third nodes coupled to the first to third terminals respectively; and a replica circuit including fourth, fifth nodes coupled to the second and third terminals respectively, and further including a sixth node coupled to the fourth terminal.
地址 Boise ID US