Semiconductor device and method of fabricating the same

摘要

A method of fabricating a semiconductor device is provided as follows. Epitaxial layers is formed on an active fin structure of a substrate. First metal gate electrodes are formed on the active fin structure. Each first metal gate electrode and each epitaxial layer are alternately disposed in a first direction on the active fin structure. ILD patterns are formed on the epitaxial layers, extending in a second direction crossing the first direction. Sacrificial spacer patterns are formed on the first metal gate electrodes. Each of the plurality of sacrificial spacer patterns covers a corresponding first metal gate electrode of the first metal gate electrodes. Self-aligned contact holes and sacrificial spacers are formed by removing the ILD patterns. Each self-aligned contact hole exposes a corresponding epitaxial layer disposed under each ILD pattern. Source/drain electrodes are formed in the self-aligned contact holes. The sacrificial spacers are replaced with air spacers.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming an active fin structure and an isolation region on a substrate; forming a plurality of epitaxial layers on the active fin structure; forming a plurality of first metal gate electrodes on the active fin structure, wherein each of the first metal gate electrodes and each of the epitaxial layers are alternately disposed in a first direction on the active fin structure; forming a plurality of ILD patterns on the plurality of epitaxial layers, wherein each of the plurality of ILD patterns is extended in a second direction crossing the first direction; forming a plurality of sacrificial spacer patterns on the plurality of first metal gate electrodes, wherein each of the plurality of sacrificial spacer patterns covers a corresponding first metal gate electrode of the plurality of first metal gate electrodes; forming a plurality of self-aligned contact holes and a plurality of sacrificial spacers by removing the plurality of ILD patterns, wherein each of the plurality of self-aligned contact holes exposes a corresponding epitaxial layer disposed under each of the plurality of ILD patterns; forming a plurality of source/drain electrodes in the plurality of self-aligned contact holes; and replacing the plurality of sacrificial spacers with a plurality of air spacers.