Tuning tensile strain on FinFET

摘要

A fin field effect transistor (FinFET) having a tunable tensile strain and an embodiment method of tuning tensile strain in an integrated circuit are provided. The method includes forming a source/drain region on opposing sides of a gate region in a fin, forming spacers over the fin, the spacers adjacent to the source/drain regions, depositing a dielectric between the spacers; and performing an annealing process to contract the dielectric, the dielectric contraction deforming the spacers, the spacer deformation enlarging the gate region in the fin.

主权项

1. A semiconductor device comprising
a first device of a first conductivity type, the first device having a first gate electrode, first sidewalls of the first gate electrode having a first profile; and a second device of a second conductivity type, the second device having a second gate electrode, second sidewalls of the second gate electrode having a second profile, the first profile different than the second profile, a first channel length of the first device being less than a second channel length of the second device, the first conductivity type being opposite the second conductivity type, the second sidewalls being adjacent a contracted dielectric, the contracted dielectric having a concave sidewall adjacent the second sidewalls.