Semiconductor device and manufacturing method of the same

摘要

Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.

主权项

1. A semiconductor device configured as a backside illuminated solid-state imaging device, comprising:
a first semiconductor, wherein the first semiconductor includes a first semiconductor layer and a first interconnect layer comprising first interlayer insulating films and first interconnects; a second semiconductor, wherein the second semiconductor includes a second semiconductor layer and a second interconnect layer comprising second interlayer insulating films and second interconnects; and a conductive member that is provided in a connection hole, wherein
at least one of the first interconnects and at least one of the second interconnects are exposed at different depths,the conductive member is a conductive film provided on an inner wall of the connection hole, andthe conductive member connects the at least one of the first interconnects and the at least one of the second interconnects that are exposed at different depths.