| 发明名称 | Semiconductor switch | ||
| 摘要 | According to an embodiment, a semiconductor switch includes a first insulating film on a semiconductor substrate, a first semiconductor layer on the first insulating film, a semiconductor switch circuit on the first semiconductor layer, and a wiring on the first insulating film. The first insulating film being between the wiring and the substrate. The wiring connects the semiconductor switch circuit and a terminal. A polycrystalline semiconductor layer is between the wiring and the first insulating film. | ||
| 申请公布号 | US9627208(B2) | 申请公布日期 | 2017.04.18 |
| 申请号 | US201514842405 | 申请日期 | 2015.09.01 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Ishimaru Atsushi;Nagaoka Masami |
| 分类号 | H03K17/16;H03K17/81;H01L23/62;H01L29/68;H01L21/263 | 主分类号 | H03K17/16 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor switch, comprising: a first insulating film on a semiconductor substrate; a first semiconductor layer on the first insulating film; a semiconductor switch circuit on the first semiconductor layer; a wiring on the first insulating film, the first insulating film being between the wiring and the semiconductor substrate, the wiring connecting the semiconductor switch circuit and a first terminal; and a polycrystalline semiconductor layer between the wiring and the first insulating film and electrically isolated from the wiring. | ||
| 地址 | Tokyo JP | ||