发明名称 |
PACKAGED MICROELECTRONIC DEVICES AND METHODS FOR MANUFACTURING PACKAGED MICROELECTRONIC DEVICES |
摘要 |
Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged microelectronic device can include a support member, a first die attached to the support member, and a second die attached to the first die in a stacked configuration. The device can also include an attachment feature between the first and second dies. The attachment feature can be composed of a dielectric adhesive material. The attachment feature includes (a) a single, unitary structure covering at least approximately all of the back side of the second die, and (b) a plurality of interconnect structures electrically coupled to internal active features of both the first die and the second die. |
申请公布号 |
US2017103961(A1) |
申请公布日期 |
2017.04.13 |
申请号 |
US201615388166 |
申请日期 |
2016.12.22 |
申请人 |
Micron Technology, Inc. |
发明人 |
Lee Choon Kuan;Chong Chin Hui;Corisis David J. |
分类号 |
H01L23/00;H01L23/48 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. An assembly, comprising:
a microelectronic die comprising a substrate having an active side and a back side opposite the active side, integrated circuitry, and a plurality of connectors electrically coupled to the integrated circuitry, wherein the individual connectors include a terminal at the active side of the substrate and an electrically conductive through-substrate interconnect in contact with the terminal and extending completely through the substrate to a terminus at the back side of the substrate; and a connection structure attached to the back side of the substrate, wherein the connection structure comprises— an at least initially generally flexible film having a plurality of preformed openings at least partially aligned with the portions of the through-substrate interconnects accessible at the back side of the substrate; and conductive couplers in the openings and in contact with the corresponding accessible portions of the through-substrate interconnects. |
地址 |
Boise ID US |