First and second magneto-resistive sensors formed by first and second sections of a layer stack

摘要

Embodiments relate to a sensor device including a layer stack 600, the layer stack 600 including at least ferromagnetic and non-magnetic layers formed on a common substrate 620. The sensor device 600 further includes at least a first magneto-resistive sensor element 711 provided by a first section 611 of the layer stack 600. The first magneto-resistive sensor element 711 herein is configured to generate a first signal. The sensor device 600 also includes a second magneto-resistive sensor element 712 provided by a second section 612 of the layer stack 610. The second magneto-resistive sensor element 712 herein is configured to generate a second signal for verifying the first signal.

主权项

1. A device, comprising:
at least a first magneto-resistive sensor element configured to generate a first signal in response to a magnetic field, wherein the first magneto-resistive sensor element comprises a first section of a common layer stack comprising ferromagnetic and non-magnetic layers formed on a common substrate; a second magneto-resistive sensor element configured to generate a second signal in response to the same magnetic field for verifying the first signal, wherein the second magneto-resistive sensor element comprises a second section of the common layer stack, wherein the first and the second sections comprise common ferromagnetic and non-magnetic layers of the common layer stack; and a verification circuit configured to compare the first signal against the second signal and generate an output signal that indicates whether or not the first signal and the second signal correspond to one another by determining whether a difference between the first and second signal or a ratio between the first and second signal is within a predetermined range.