发明名称 Semiconductor memory device and operating method thereof
摘要 There may be provided a semiconductor memory device and an operating method thereof. A semiconductor memory device may include a memory cell array including a plurality of memory strings. The semiconductor memory device may include a peripheral circuit for performing a program operation on the plurality of memory strings, and a control logic for controlling the peripheral circuit to perform the program operation. The control logic may control the peripheral circuit to adjust potential levels of program permission voltages to be applied to the plurality of memory strings according to arrangement positions of the memory strings.
申请公布号 US9620221(B1) 申请公布日期 2017.04.11
申请号 US201615140710 申请日期 2016.04.28
申请人 SK HYNIX INC. 发明人 Son Myeong Cheol
分类号 G11C16/10;G11C16/04;G11C16/08;G11C16/26 主分类号 G11C16/10
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A semiconductor memory device, comprising: a memory cell array configured to include a plurality of memory strings; a peripheral circuit configured to perform a program operation on the plurality of memory strings; and a control logic configured to control the peripheral circuit to perform the program operation, wherein the control logic controls the peripheral circuit to adjust potential levels of program permission voltages to be applied to bit lines of respective memory strings according to arrangement positions of the memory strings, wherein the program permission voltage applied to a memory string adjacent in a first direction among the plurality of memory strings has a negative potential level.
地址 Icheon-si KR