SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING OF GE-BASED MATERIALS AND DEVICES

摘要

A CMP slurry composition which provides for a high Ge- or SiGe-to-dielectric material selectivity a low rate of Ge or SiGe recess formation includes an oxidant and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound. In some examples, the slurry composition also includes an etching inhibitor. In some cases, the slurry composition may include an abrasive, a surfactant, an organic complexant, a chelating agent, an organic or inorganic acid, an organic or inorganic base, a corrosion inhibitor, or a buffer. The slurry composition may be distributed onto a surface of a polishing pad disposed on a platen that is configured to rotate. Additionally, a workpiece carrier configured to house a substrate may bring the substrate into contact with the rotating polishing pad and thereby polish the substrate utilizing the slurry composition.

主权项

1. A slurry composition for a chemical mechanical polish (CMP) process for semiconductor device fabrication, comprising:
an oxidant including a compound having one or more oxygen molecules; and a germanium removal rate enhancer including at least one of a methylpyridine compound and a methylpyridine derivative compound.