Semiconductor device with current sensor

摘要

A semiconductor device includes a semiconductor body. The semiconductor body includes a load transistor part and a sensor transistor part. A first source region of the load transistor part and a second source region of the sensor transistor part are electrically separated from each other. A common gate electrode in a common gate trench extends into the semiconductor body from a first surface. A first part of the common gate trench is in the load transistor part, and a second part of the common gate trench is in the sensor transistor part. A field electrode in a field electrode trench extends into the semiconductor body from the first surface. A maximum dimension of the field electrode trench parallel to the first surface is smaller than a depth of the field electrode trench.

主权项

1. A semiconductor device, comprising:
a semiconductor body comprising a load transistor part and a sensor transistor part; a first source region of the load transistor part and a second source region of the sensor transistor part, the first and second source regions being electrically separated from each other; a common gate electrode in a common gate trench extending into the semiconductor body from a first surface, the gate trench extending through the load transistor part and the sensor transistor part, wherein a whole cross-section of the common gate trench extends through both the load transistor part and the sensor transistor part; and a field electrode in a field electrode trench extending into the semiconductor body from the first surface, wherein a maximum dimension of the field electrode trench parallel to the first surface is smaller than a depth of the field electrode trench.