Methods of manufacturing semiconductor devices including an oxide layer

摘要

In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.

主权项

1. A method of manufacturing an oxide layer of a semiconductor device, comprising:
forming a stacked structure that includes a plurality of channels extending through a plurality of insulating interlayer patterns and gate electrodes alternately stacked on each other on a substrate, the plurality of insulating interlayer patterns and gate electrodes defining at least one opening that exposes a portion of the substrate; providing a preliminary precursor flow on an innerwall of the at least one opening to form a preliminary precursor layer on the innerwall; providing a precursor flow and a first oxidizing agent flow on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on each other, the first oxidizing agent flow including a mixture gas of hydrogen (H2) and oxygen (O2) which are concurrently introduced, wherein hydrogen creates oxygen radicals from oxygen; and providing a second oxidizing agent flow on the precursor layers and first oxidizing agent layers alternately stacked on each other to form a filling layer in the opening.